PART |
Description |
Maker |
NAND01G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
TC58NVG6T2FTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
TC58NVG4D2ETA00 |
16 GBIT (2G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
TH58NVG2S3BTG00 |
4-Gbit CMOS NAND EPROM
|
Toshiba
|
TC58NVG0S3AFT00 |
1 GBit CMOS NAND EPROM
|
Toshiba
|
TC58DVG02A1FI0 |
1 Gbit (128M x *8its) CMOS NAND EPROM
|
Toshiba
|
TC58NVG0S3AFT05 |
1 GBIT (128M × 8 BITS) CMOS NAND EEPROM
|
Toshiba. Toshiba Semiconductor
|
NAND02G-B2C NAND02GR3B2BZA1E NAND02GR4B2BZA1F NAND |
1千兆2千兆位,2112 Byte/1056字的页面.8V/3VNAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面.8V/3V,NAND闪存
|
意法半导 STMicroelectronics N.V.
|
K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
From old datasheet system EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC 32M x 8 Bit NAND Flash Memory
|
Samsung Electronics Inc SAMSUNG[Samsung semiconductor]
|
CD4011BT CD4011BDTR 5962R9662101TXC 5962R9662101TC |
16-Bit Bus Transceiver And Register With 3-State Outputs 56-SSOP -40 to 85 4000/14000/40000 SERIES, QUAD 2-INPUT NAND GATE, CDIP14 CMOS Quad 2-Input NAND Gate
|
Intersil, Corp. Intersil Corporation
|